Taiwan Semiconductor 300V NPN Bipolar Junction Transistor
Taiwan Semiconductor 300V NPN Bipolar Junction Transistor is ideal for high-voltage switching and driver applications. A negative-positive-negative BJT transistor uses both electrons and holes as charge carriers. Taiwan Semiconductor 300V NPN Bipolar Junction Transistor (TSC497CXRFG) has a maximum collector emitter voltage of 300V and a maximum emitter base voltage of 5V. The transistor is packaged in the small outline transistor (SOT-23-3) three-pin surface mount.
Features
300V VCEO collector emitter voltage300V VCBO collector base voltage5V VEBO emitter base voltage200mV collector-emitter saturation voltage1A maximum DC collector current75Mhz gain bandwidth product fT
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